Analysis of High Frequency AlGaN/GaN-Based HEMT for Resistive Load Inverter

The millimeter-wave (mmW) band, which operates between 30 and 300 GHz, is in high demand because of its shorter wavelength and larger frequency range. A T-shaped gate MODFET (modulation-doped FET) has been proposed for mmW applications which can be operated at high power and wider frequency ranges. The proposed T-gated HEMT exhibits acceptable RF and DC properties for millimeter-wave applications and is based on a T-shaped gate AlGaN/GaN structure. The HEMT achieves a unilateral power gain frequency (fMAX) of 192 GHz and a cutoff frequency (fT) of 114 GHz. The proposed T-gated HEMT has been also analyzed for the DC parameters. The considered DC parameters are ID, gm, and Vt, where ID is drain current, gm is transconductance, and Vt is threshold voltage. The suggested HEMT with T-shaped gate and AlGaN/GaN material system has been used to create a resistive load inverter, and mixed-mode simulations have been used to examine the voltage transfer characteristics (VTC) curves and transient response. The Silvaco Atlas simulator has been used for all simulations.