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Single crystals of Mn0.03Bi1.97Se3 were synthesized by modified Bridgman technique and phase purity was confirmed via XRD and Rietveld analysis. EDAX analysis has verified the stoichiometric ratio of elements in the sample. A micron size device for four probe electrical transport measurement was fabricated using exfoliated flakes of single crystals of Mn0.03Bi1.97Se3 by electron beam lithography process. Resistivity measurement was performed in 2–300 K temperature range. We report evidence for Kondo effect in Mn0.03Bi1.97Se3 micro-flakes with Tmin of 14.4 K.

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Kondo Effect in Micron Size Device Fabricated from Flakes of Mn-Doped Bi2Se3 Topological Insulator

  • 会议论文

  • 发表日期：

    2025年

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  • Vishal K. Maurya,
  • Jeetendra K. Tiwari,
  • S. Ghosh,
  • S. Patnaik

摘要

Single crystals of Mn0.03Bi1.97Se3 were synthesized by modified Bridgman technique and phase purity was confirmed via XRD and Rietveld analysis. EDAX analysis has verified the stoichiometric ratio of elements in the sample. A micron size device for four probe electrical transport measurement was fabricated using exfoliated flakes of single crystals of Mn0.03Bi1.97Se3 by electron beam lithography process. Resistivity measurement was performed in 2–300 K temperature range. We report evidence for Kondo effect in Mn0.03Bi1.97Se3 micro-flakes with Tmin of 14.4 K.