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Mode-locked laser diodes were fabricated with highly-stacked InAs quantum dots (QDs) using a strain compensation technique. Due to the use of high-density QDs, a wide-band gain was obtained, which resulted in a narrow pulse width and high repetition rate. Optical pulse trains of 20, 80, and 100 GHz with about 1ps pulse width were obtained depending on cavity length.

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Mode-Locked Laser Diode with Highly-Stacked InAs Quantum Dots

  • 会议论文

  • 发表日期：

    2025年

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  • Kouichi Akahane,
  • Satoshi Yanase,
  • Atsushi Matsumoto,
  • Toshimasa Umezawa,
  • Naokatsu Yamamoto,
  • Tomohiro Maeda,
  • Hideyuki Sotobayashi

摘要

Mode-locked laser diodes were fabricated with highly-stacked InAs quantum dots (QDs) using a strain compensation technique. Due to the use of high-density QDs, a wide-band gain was obtained, which resulted in a narrow pulse width and high repetition rate. Optical pulse trains of 20, 80, and 100 GHz with about 1ps pulse width were obtained depending on cavity length.