The semiconductor materials from group III–V form compound semiconductors which are used in quantum dot (QD) systems. As a representation of a QD system, a square semiconductor bi-material made of Indium Arsenide (InAs) for the QD and Gallium Arsenide (GaAs) for the substrate is considered with an edge dislocation present in InAs. The lattice parameter of InAs is greater than the lattice parameter of GaAs. This lattice mismatch results in the compressive strain in InAs, known as misfit strain. An edge type dislocation is considered near the material interface, which has an inclination of 15° with the horizontal. The numerical simulations of dislocation are performed using the extended finite element method (XFEM). For solving the force equilibrium equation, the traction field is applied at the outer boundary. The heat equation is solved for different heat boundary conditions (heat flux in the x-direction and y-direction, isothermal temperature). The temperature variation is taken from 300 to 500 K. The Peach-Koehler (P-K) force of the dislocation is computed after obtaining the strains, stresses and temperature gradients in the domain. The P-K force increases with temperature for the heat flux boundary conditions when misfit strain is not considered. With the consideration of misfit strain, the trend of the P-K curve corresponding to heat flux in the y-direction changes a bit. Moreover, the P-K curves for the isothermal boundary condition have the same trend with and without misfit strain.