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FinFET devices are winning a strong place in replacing MOSFETs due to their eminent Short Channel Effects (SCEs) controllability. In this paper, the Gate All Around (GAA) FinFET device and GAA FinFET device with Buried Oxide (BOX) have been designed at 24 nm technology node using Cogenda TCAD tool. The analysis of the designed devices has been done based on performance-related parameters such as ON current (ION), OFF current (IOFF), and ION to IOFF ratio. The designed devices have also been compared and the results reveal that there is a reduction of 45 times in IOFF of GAA FinFET device with buried oxide compared to GAA FinFET device which makes it suitable for power optimization applications. The ION of GAA FinFET is 3.56 times better than GAA FinFET with buried oxide, making it a great choice for high-speed operations.

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Design and Analysis of Gate All Around FinFET with and Without Buried Oxide

  • 会议论文

  • 发表日期：

    2026年

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  • Shaifali Ruhil,
  • Vandana Khanna

摘要

FinFET devices are winning a strong place in replacing MOSFETs due to their eminent Short Channel Effects (SCEs) controllability. In this paper, the Gate All Around (GAA) FinFET device and GAA FinFET device with Buried Oxide (BOX) have been designed at 24 nm technology node using Cogenda TCAD tool. The analysis of the designed devices has been done based on performance-related parameters such as ON current (ION), OFF current (IOFF), and ION to IOFF ratio. The designed devices have also been compared and the results reveal that there is a reduction of 45 times in IOFF of GAA FinFET device with buried oxide compared to GAA FinFET device which makes it suitable for power optimization applications. The ION of GAA FinFET is 3.56 times better than GAA FinFET with buried oxide, making it a great choice for high-speed operations.