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Variable work function (3–7 eV) and high band gap has made transition metal oxides (TMOs) favorable candidates for their use in semiconductor device as dopant free carrier selective layers. In TMO based c-Si(n) heterojunction (SHJ) solar cells, the energy band alignment at TMO/c-Si(n) junction favors the holes transport from c-Si(n) to TMO making high work function TMOs suitable to be employed as hole selective layer (HSL). In this work, thermally evaporated vanadium oxide (V2Ox), a TMO layer, is used as an HSL in dopant free single-side SHJ solar cell. Prepared V2Ox films are observed to have band gap of 3.28 ± 0.01 eV and high transparency (≥ 80%) in visible region. AFM and FESEM studies confirmed the formation of uniform and smooth V2Ox films. High conversion efficiency of 9.74% is achieved for single-side V2Ox/c-Si(n) solar cell. These outcomes demonstrate the potential of this simple device architecture. Further modifications are going to achieve better performance.

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Use of Dopant-Free Vanadium Oxide (V2Ox) as Hole Selective Layer While Fabrication of Single Side Silicon Heterojunction Solar Cell

  • 会议论文

  • 发表日期：

    2025年

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  • Rahul,
  • Juhi Kumari,
  • Pratima Agarwal

摘要

Variable work function (3–7 eV) and high band gap has made transition metal oxides (TMOs) favorable candidates for their use in semiconductor device as dopant free carrier selective layers. In TMO based c-Si(n) heterojunction (SHJ) solar cells, the energy band alignment at TMO/c-Si(n) junction favors the holes transport from c-Si(n) to TMO making high work function TMOs suitable to be employed as hole selective layer (HSL). In this work, thermally evaporated vanadium oxide (V2Ox), a TMO layer, is used as an HSL in dopant free single-side SHJ solar cell. Prepared V2Ox films are observed to have band gap of 3.28 ± 0.01 eV and high transparency (≥ 80%) in visible region. AFM and FESEM studies confirmed the formation of uniform and smooth V2Ox films. High conversion efficiency of 9.74% is achieved for single-side V2Ox/c-Si(n) solar cell. These outcomes demonstrate the potential of this simple device architecture. Further modifications are going to achieve better performance.