A balanced and optimized processor for cache storage design significantly utilizes the graphene nanoribbon field effect transistors (GNRFETs) static random access memory (SRAM) cells. A typical 6T GNRFETS SRAM cell usually exhibits greater energy loss and latency. The purpose of the GNRFET 6T and 8T structures is to lower the overall power consumption and the static power dissipation. However, the GNRFETs 6T and 8T cells use more space and have less stability due to the more transistors. To solve these issues, the new 5T GNRFETS SRAM cell have been suggested. As compared to the conventional 6T, GNRFETs 6T, and 8T cells, the suggested cell uses 1.7×, 1.2×, and 1.4× less space, correspondingly. In comparison with 6T, GNRFETs 6T, and 8T, the suggested 5T cell's total power consumption is reduced by 1.9×, 1.86×, and 1.84×, correspondingly. In a similar vein, the suggested cell's static power loss is decreased in comparison to conventional 6T, GNRFETs 6T, and 8T by 1.75×, 1.49×, and 1.7×, correspondingly. As compared to conventional 6T, GNRFETs 6T, and Si-CMOS 8T, the delay has increased by 1.5×, 1.48×, and 1.43×, correspondingly. The suggested cell has a comparable significant improvement in stability. To verify the deviation, a Monte Carlo (MC) simulation for the suggested cell with changes to the process was performed.