A high-performance Low Dropout (LDO) voltage regulator was designed and optimized using the UMC 180 nm technology process. The design incorporates a PMOS pass transistor and a folded cascode operational amplifier (op-amp), achieving a stable output of 0.8 V for an input voltage of 1.8 V and a load current of 20 mA. Critical performance parameters include a load regulation of 0.15 mV/mA, line regulation of 12 mV/V, and Power Supply Rejection Ratio (PSRR) of −40 dB at 10 Hz and −37 dB at 100 kHz. The line transient response exhibits an undershoot of 0.34 mV, an overshoot of 0.28 mV, and a settling time of 12 µs. Additionally, the load transient response shows an undershoot of 26.49 mV, an overshoot of 32.19 mV, and a settling time of 10.9 µs. The LDO demonstrates a gain of 74 dB and a phase margin of 78°, with a unity gain bandwidth (UGB) of 9.47 MHz and a 3 dB gain frequency of 2 kHz. A PVT (process, voltage, and temperature) analysis was conducted to evaluate the impact of parameter variations under different operating conditions. This design underscores the importance of minimal dropout voltage while maintaining high efficiency and stability, contributing significantly to the advancement of reliable power management in VLSI systems.