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In view of an increasing trend in digital-driven human contact, the use of cutting-edge data retention technologies that include higher storage capacity, decreased power consumption, and high switching rates has become an absolute prerequisite. The conventional Si-based binary storage systems have certain limitations due to which it fails to achieve ultrahigh-density requirements of post-Moore information storage. This has left researcher community searching for alternatives to the current existing storage technology. Organic material based resistive memory has come up as an alternative that can solve the existing issues. In this paper, the pentacene and pentacene:molybdenum disulfide (MoS2) nanocomposite (NC) based resistive random access memory (ReRAM) on an indium tin oxide (ITO)-coated polyethylene terephthalate (PET) substrate is proposed and fabricated by low-cost spin coating technology. The current–voltage characteristic of the proposed devices shows that pentacene-based ReRAM performs resistive switching only at negative bias. At the same time, pentacene:MoS2 NC -based ReRAM exhibits resistive switching at both polarities. In addition, the hysteresis loop in the pentacene:MoS2 NC device is larger than the pentacene device. Therefore, the pentacene:MoS2 NC device is more suitable than the pentacene device for the ReRAM application.

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Study and Characterization of Pentacene and Pentacene:MoS2 Nanocomposite Based ReRAM by a Low Cost Spin Coating Technique

  • 会议论文

  • 发表日期：

    2026年

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  • Ajay Kumar Dwivedi,
  • Tulika Bajpai,
  • Ravi Raj,
  • Shweta Tripathi

摘要

In view of an increasing trend in digital-driven human contact, the use of cutting-edge data retention technologies that include higher storage capacity, decreased power consumption, and high switching rates has become an absolute prerequisite. The conventional Si-based binary storage systems have certain limitations due to which it fails to achieve ultrahigh-density requirements of post-Moore information storage. This has left researcher community searching for alternatives to the current existing storage technology. Organic material based resistive memory has come up as an alternative that can solve the existing issues. In this paper, the pentacene and pentacene:molybdenum disulfide (MoS2) nanocomposite (NC) based resistive random access memory (ReRAM) on an indium tin oxide (ITO)-coated polyethylene terephthalate (PET) substrate is proposed and fabricated by low-cost spin coating technology. The current–voltage characteristic of the proposed devices shows that pentacene-based ReRAM performs resistive switching only at negative bias. At the same time, pentacene:MoS2 NC -based ReRAM exhibits resistive switching at both polarities. In addition, the hysteresis loop in the pentacene:MoS2 NC device is larger than the pentacene device. Therefore, the pentacene:MoS2 NC device is more suitable than the pentacene device for the ReRAM application.