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Power electronic technology is used in the transmission, processing, storage, and control of electrical energy, and its main function is realized by power electronic devices. The main requirements for power electronic devices are high breakdown voltage, low on-resistance, low switching loss, high switching speed, and high reliability. Si-based power electronic technology is the mainstream technology currently, but due to the inherent limitations of the Si material, Si-based power electronic devices face significant bottlenecks in breakdown voltage, on-resistance, switching loss, switching speed, and reliability.

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Applications of Freestanding Gallium Nitride Substrates in Power Electronic and Microwave RF Devices

  • 章节

  • 发表日期：

    2025年

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  • Ke Xu,
  • Jianfeng Wang,
  • Guoqiang Ren,
  • Zongliang Liu

摘要

Power electronic technology is used in the transmission, processing, storage, and control of electrical energy, and its main function is realized by power electronic devices. The main requirements for power electronic devices are high breakdown voltage, low on-resistance, low switching loss, high switching speed, and high reliability. Si-based power electronic technology is the mainstream technology currently, but due to the inherent limitations of the Si material, Si-based power electronic devices face significant bottlenecks in breakdown voltage, on-resistance, switching loss, switching speed, and reliability.