Scholarlink

At present, the main methods of growing Gallium Nitride (GaN) single crystal substrates include High-nitrogen-pressure solution growth (HNPSG), Na-flux method (Na Flux), Hydride vapor phase epitaxy (HVPE) and Ammonothermal method. HNPSG has stringent requirements for equipment (pressure greater than 1 Gpa, temperature greater than 1500 °C, making the production of large-sized crystals and industrialization challenging. The remaining three methods have their own advantages and disadvantages: HVPE has a rapid growth rate and is easy to obtain large-size crystal, which is the most promising method for commercial applications.

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Ammonothermal Method

  • 章节

  • 发表日期：

    2025年

查看全文
  • Ke Xu,
  • Jianfeng Wang,
  • Guoqiang Ren,
  • Zongliang Liu

摘要

At present, the main methods of growing Gallium Nitride (GaN) single crystal substrates include High-nitrogen-pressure solution growth (HNPSG), Na-flux method (Na Flux), Hydride vapor phase epitaxy (HVPE) and Ammonothermal method. HNPSG has stringent requirements for equipment (pressure greater than 1 Gpa, temperature greater than 1500 °C, making the production of large-sized crystals and industrialization challenging. The remaining three methods have their own advantages and disadvantages: HVPE has a rapid growth rate and is easy to obtain large-size crystal, which is the most promising method for commercial applications.