Scholarlink

In the 1960s, halide-based vapor phase epitaxy technology was developed for the growth of Ge (Marinace in IBM J Res Dev 4:248–255, 1960), GaAs (Knight et al. in Solid-State Electron 8:178–0, 1965) and GaP (Oldham in J Appl Phys 36:2887–3000, 1965) materials; based on this, the growth of GaAs, GaP materials was also achieved in a sealed chamber using HCl gas as the reaction precursor (Moest and Shupp in J Electrochem Soc 109:1061–1065, 1962), which is the prototype of contemporary hydride vapor phase epitaxy (HVPE) growth technology. In 1966, J. J. Tietjen and J. A. Amick from the RCA laboratory further used HCl and metal Ga reaction as the group III source, and arsine and phosphine as the group V source, to achieve the growth of GaAsxP1−x materials (Tietjen et al. in J Electrochem Soc 116:492–0, 1969), marking the rapid development period of HVPE growth technology.

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Hydride Vapor Phase Epitaxy Method

  • 章节

  • 发表日期：

    2025年

查看全文
  • Ke Xu,
  • Jianfeng Wang,
  • Guoqiang Ren,
  • Zongliang Liu

摘要

In the 1960s, halide-based vapor phase epitaxy technology was developed for the growth of Ge (Marinace in IBM J Res Dev 4:248–255, 1960), GaAs (Knight et al. in Solid-State Electron 8:178–0, 1965) and GaP (Oldham in J Appl Phys 36:2887–3000, 1965) materials; based on this, the growth of GaAs, GaP materials was also achieved in a sealed chamber using HCl gas as the reaction precursor (Moest and Shupp in J Electrochem Soc 109:1061–1065, 1962), which is the prototype of contemporary hydride vapor phase epitaxy (HVPE) growth technology. In 1966, J. J. Tietjen and J. A. Amick from the RCA laboratory further used HCl and metal Ga reaction as the group III source, and arsine and phosphine as the group V source, to achieve the growth of GaAsxP1−x materials (Tietjen et al. in J Electrochem Soc 116:492–0, 1969), marking the rapid development period of HVPE growth technology.