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This work presents a detailed modeling and radio frequency (RF) characteristics of an AlGaN/GaN high electron mobility transistor (HEMT) specifically developed for 5G applications. The SILVACO TCAD tools are used in the simulation phase to enable thorough behavior modeling of the device. The TONYPLOT program is used to create a variety of characteristic curves, such as the output characteristics and transfer curves. These curves offer insightful information about the HEMT’s performance characteristics. Furthermore, important radiofrequency characteristics that impact the device’s overall efficacy and efficiency are derived from the simulation data. Significantly, a cut-off frequency of 219.55 GHz is attained, demonstrating the high-speed applications applicability of the transistor. The research focuses deeper into the consequences of reducing the device’s size and examines how this impacts its functionality. For the purpose of improving upcoming designs and HEMT capabilities in 5G technologies, this investigation is essential.

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Gate Length Optimization of AlGaN/GaN HEMT for Performance Enhancement in 5G Applications

  • 会议论文

  • 发表日期：

    2025年

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  • Laiphangbam Renita Devi,
  • Khomdram Jolson Singh,
  • Dickson Warepam,
  • L. Kholee Phimu

摘要

This work presents a detailed modeling and radio frequency (RF) characteristics of an AlGaN/GaN high electron mobility transistor (HEMT) specifically developed for 5G applications. The SILVACO TCAD tools are used in the simulation phase to enable thorough behavior modeling of the device. The TONYPLOT program is used to create a variety of characteristic curves, such as the output characteristics and transfer curves. These curves offer insightful information about the HEMT’s performance characteristics. Furthermore, important radiofrequency characteristics that impact the device’s overall efficacy and efficiency are derived from the simulation data. Significantly, a cut-off frequency of 219.55 GHz is attained, demonstrating the high-speed applications applicability of the transistor. The research focuses deeper into the consequences of reducing the device’s size and examines how this impacts its functionality. For the purpose of improving upcoming designs and HEMT capabilities in 5G technologies, this investigation is essential.