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High Electron Mobility Transistors (HEMTs) are pivotal components for applications demanding elevated power levels, high-frequency performance, and minimal noise in contemporary electronic systems. This research investigates the design and optimization of next-generation HEMTs through the utilization of advanced material systems aimed at enhancing both device performance and energy efficiency. The proposed architecture integrates an Indium Phosphide (InP) cap layer, an Indium Aluminum Arsenide (InAlAs) channel, and a Titanium Nitride (TiN)-driven high-k gate stack, wherein Hafnium Oxide (HfO₂) is employed as the gate dielectric. The InP cap layer delivers exceptional surface passivation, effectively decreasing surface states and improving carrier confinement characteristics. The InAlAs channel layer provides elevated electron mobility coupled with low scattering rates, thereby ensuring outstanding transport properties. The integration of a high-k HfO₂ gate dielectric mitigates gate leakage currents while augmenting gate control, and the use of TiN as the gate material guarantees substantial thermal and mechanical stability while alleviating gate resistance. Collectively, these advancements tackle critical challenges such as power loss, frequency constraints, and device degradation. Simulation and experimental findings reveal considerable enhancements in transconductance, breakdown voltage, and power efficiency. This investigation emphasizes the transformative potential of InP/InAlAs material systems in conjunction with high-k TiN-enhanced gate stacks to propel the advancement of next-generation HEMTs for applications in telecommunications, radar, and power electronics.

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Next-Generation HEMTs with InP Cap, InAlAs Channel, and TiN-Driven High-K Gate Stack Performance

  • 会议论文

  • 发表日期：

    2026年

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  • P. Valarmathi,
  • Kottaimalai Ramaraj,
  • P. Sivakumar,
  • P. Harikrishnan

摘要

High Electron Mobility Transistors (HEMTs) are pivotal components for applications demanding elevated power levels, high-frequency performance, and minimal noise in contemporary electronic systems. This research investigates the design and optimization of next-generation HEMTs through the utilization of advanced material systems aimed at enhancing both device performance and energy efficiency. The proposed architecture integrates an Indium Phosphide (InP) cap layer, an Indium Aluminum Arsenide (InAlAs) channel, and a Titanium Nitride (TiN)-driven high-k gate stack, wherein Hafnium Oxide (HfO₂) is employed as the gate dielectric. The InP cap layer delivers exceptional surface passivation, effectively decreasing surface states and improving carrier confinement characteristics. The InAlAs channel layer provides elevated electron mobility coupled with low scattering rates, thereby ensuring outstanding transport properties. The integration of a high-k HfO₂ gate dielectric mitigates gate leakage currents while augmenting gate control, and the use of TiN as the gate material guarantees substantial thermal and mechanical stability while alleviating gate resistance. Collectively, these advancements tackle critical challenges such as power loss, frequency constraints, and device degradation. Simulation and experimental findings reveal considerable enhancements in transconductance, breakdown voltage, and power efficiency. This investigation emphasizes the transformative potential of InP/InAlAs material systems in conjunction with high-k TiN-enhanced gate stacks to propel the advancement of next-generation HEMTs for applications in telecommunications, radar, and power electronics.