An investigation on cylindrical gate-all-around Junctionless Field Effect Transistors (JLFETs) with no gradients in doping concentration and non-availability of junctions has been conducted. The findings indicate that the suggested device provides a unique architecture that significantly enhances transistor performance while being less vulnerable to short-channel effects (SCEs). Specifically designed for power electronics applications, the Atlas 3D device simulator has been utilized to analyze the performance of the proposed JLFET. Gallium Nitride (GaN) III-V compound semiconductors are used in this study to examine the electrical performance of a JLFET. Comparing the III-V JLFET to other circuit topologies, the simulations showed a favorable subthreshold slope and a lower drain-induced barrier lowering (DIBL). The subthreshold slope is approximately 63 mV/dec, which is extremely near the ideal 60 mV/dec and exhibits a low DIBL of approximately 30 mV/V. According to simulations and experimental evidence, GaN-based JLFETs have a higher power efficiency than silicon-based devices. The potential use of GaN-based JLFET as a cutting-edge substitute for advanced energy applications is covered in this research.