The global electronics market’s intense competition has driven increased academic interest in metal-semiconductor interactions, which are critical for enhancing electronic device efficiency. Researchers are exploring innovative methods to create reliable contacts using various metals, recognizing their importance in all modern electronics. This rapidly evolving field underscores the need to thoroughly understand the physical and electrical properties of these contacts. Schottky contacts, for instance, are pivotal in applications like radiation detection and radio frequency technology. High-quality ohmic contacts are essential for optimizing semiconductor device performance, as they ensure minimal resistance at the metal-semiconductor junction. This study specifically investigates the characteristics of aluminum ohmic contacts subjected to annealing at 550 °C for 15 min and examines the behaviour of Ag/p-Si and Ag/PEO/p-Si structures. The findings contribute to advancements in semiconductor technology, highlighting the significance of contact quality in the overall performance and reliability of electronic devices.