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Main aim of present study is to investigate room temperature (RT) thermoelectric (TE) parameters of β-Zn4Sb3 thin films after heat treatment for 6 h at 323 K, 343 K, 363 K and 383 K. TE measurements of electrical conductivity (σ), Seebeck coefficient (S) and power factor (PF) were performed and values were determined at RT. Melt-quench and thermal evaporation routes were used for synthesis and thin film deposition of β-Zn4Sb3 respectively. Maximum σ, S, PF values of 9.5 ×103 Sm−1,138 μVK−1 and 145 μWm−1 K−2 respectively were achieved at RT after heat treatment of films and an enhancement of 39.85%, 48.38% and 145.76% respectively compared to without heat treated thin film sample. Structural properties of thin films were investigated using X-ray diffraction (XRD) and crystallite sizes were determined. Optical properties of thin films were examined using ultraviolet-visible spectroscopy (UV-Vis) and photoluminescence (PL). Direct band gap energy (Eg) of 1.27 eV was estimated using tauc plot method. Field Emission Scanning Electron Microscope (FESEM) was used to investigate morphological properties and thickness of thin films. Thin film thickness of 327 nm was determined using cross sectional FESEM. Energy Dispersive X-ray (EDX) was used to analyse atomic percentages composition.

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Room Temperature Thermoelectric Properties of β-Zn4Sb3 Thermally Evaporated Thin Films

  • 会议论文

  • 发表日期：

    2025年

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  • Avinash Kumar,
  • S. K. Tripathi

摘要

Main aim of present study is to investigate room temperature (RT) thermoelectric (TE) parameters of β-Zn4Sb3 thin films after heat treatment for 6 h at 323 K, 343 K, 363 K and 383 K. TE measurements of electrical conductivity (σ), Seebeck coefficient (S) and power factor (PF) were performed and values were determined at RT. Melt-quench and thermal evaporation routes were used for synthesis and thin film deposition of β-Zn4Sb3 respectively. Maximum σ, S, PF values of 9.5 ×103 Sm−1,138 μVK−1 and 145 μWm−1 K−2 respectively were achieved at RT after heat treatment of films and an enhancement of 39.85%, 48.38% and 145.76% respectively compared to without heat treated thin film sample. Structural properties of thin films were investigated using X-ray diffraction (XRD) and crystallite sizes were determined. Optical properties of thin films were examined using ultraviolet-visible spectroscopy (UV-Vis) and photoluminescence (PL). Direct band gap energy (Eg) of 1.27 eV was estimated using tauc plot method. Field Emission Scanning Electron Microscope (FESEM) was used to investigate morphological properties and thickness of thin films. Thin film thickness of 327 nm was determined using cross sectional FESEM. Energy Dispersive X-ray (EDX) was used to analyse atomic percentages composition.