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Lead zirconate titanate (PZT) thin films are of significant interest in various technological applications, including MEMS sensors/actuators and non-volatile memories, owing to their exceptional piezoelectric and ferroelectric properties. In this work, PZT [Pb(Zr0.52Ti0.48)O3] thin films are deposited on Pt/Ti/SiO2/Si substrates using the sol-gel method. The deposited films are annealed at different temperatures (600, 650 and 700 °C) and heating rates (2, 10 °C/min) to realize the perovskite phase formation. We systematically investigated the effect of annealing temperature as well as the rate of annealing on the structural properties of PZT thin films, using x-ray diffraction and Raman spectroscopy. Our results indicate the importance of the annealing rate as well as the annealing temperature for the formation of perovskite phase.

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Effect of Annealing Rate and Annealing Temperature on Structural Properties of PZT Thin Films

  • 会议论文

  • 发表日期：

    2025年

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  • Karthika P. Moni,
  • P. N. Vinod,
  • Maneesh Chandran

摘要

Lead zirconate titanate (PZT) thin films are of significant interest in various technological applications, including MEMS sensors/actuators and non-volatile memories, owing to their exceptional piezoelectric and ferroelectric properties. In this work, PZT [Pb(Zr0.52Ti0.48)O3] thin films are deposited on Pt/Ti/SiO2/Si substrates using the sol-gel method. The deposited films are annealed at different temperatures (600, 650 and 700 °C) and heating rates (2, 10 °C/min) to realize the perovskite phase formation. We systematically investigated the effect of annealing temperature as well as the rate of annealing on the structural properties of PZT thin films, using x-ray diffraction and Raman spectroscopy. Our results indicate the importance of the annealing rate as well as the annealing temperature for the formation of perovskite phase.