Crystal structure, orientation, and defect measurement tools, based on Scanning Electron Microscopy (SEM) techniques, have evolved into standard approaches for characterizing the microstructure of crystalline materials. Among these, electron backscatter diffraction (EBSD) is notable for its ability to provide high-resolution, spatially resolved data on crystallographic orientation, grain boundary character, and phase identification. This chapter outlines the fundamental principles of electron backscatter diffraction (EBSD), covering its operational requirements, including sample preparation techniques and optimal electron beam configurations. It also discusses advancements in pattern indexing methods ranging from Hough and dictionary indexing to spherical indexing and their implications for resolution and accuracy. Additionally, techniques such as high-resolution EBSD, Transmission Kikuchi diffraction (TKD), and three-dimensional EBSD extend the analytical capabilities of this versatile approach. The applications of these techniques across various fields of materials science and engineering are highlighted, demonstrating their significant impact on advancing the understanding of grain structure, stress distribution, and phase transformations.