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This paper investigates the physical characteristics of gallium arsenide (GaAs) Schottky antiparallel diodes. By measuring the physical dimensions of the fabricated diodes with a scanning electron microscope, we established a 3D electromagnetic model using High Frequency Structural Simulator (HFSS) and conducted physical modeling with Technology Computer Aided Design (TCAD). A total of 576 sets of current-voltage (I–V) characteristics data were generated under different physical parameters, and the curves were aligned through linear interpolation to create a database for machine learning. This study analyzes the I–V characteristics of GaAs Schottky diodes with varying anode diameters, epitaxial layer thicknesses, and doping concentrations. The results demonstrate that these parameters have a significant impact on the diode’s current behavior.

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Physical Modeling and I–V Characteristics Analysis of Terahertz GaAs Schottky Diodes

  • 会议论文

  • 发表日期：

    2025年

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  • Zhengyang You,
  • Yihao Li,
  • Shengji Wang,
  • Xiaojiao Deng,
  • Xinhua Li

摘要

This paper investigates the physical characteristics of gallium arsenide (GaAs) Schottky antiparallel diodes. By measuring the physical dimensions of the fabricated diodes with a scanning electron microscope, we established a 3D electromagnetic model using High Frequency Structural Simulator (HFSS) and conducted physical modeling with Technology Computer Aided Design (TCAD). A total of 576 sets of current-voltage (I–V) characteristics data were generated under different physical parameters, and the curves were aligned through linear interpolation to create a database for machine learning. This study analyzes the I–V characteristics of GaAs Schottky diodes with varying anode diameters, epitaxial layer thicknesses, and doping concentrations. The results demonstrate that these parameters have a significant impact on the diode’s current behavior.