Active modulation of metamaterial induced transparency (MIT) offers fascinating prospects for improving optical networks, terahertz communications, and active sensors. Here, tunable terahertz metamaterials consisting of external three-gap split-ring resonator (TGSRR) and internal single split ring resonator (SRR) are proposed to realize the switch behavior of MIT. It is observed that the transmission spectrum of that structure corresponds to a low-frequency LC resonance at 0.497 THz and a high-frequency LC resonance at 0.765 THz, and the MIT band has a central frequency at 0.56 THz. The reduction of the gap width in the SRR can result in an increase of the transparency peak and frequency redshift. Furthermore, silicon patches are embedded in the gaps of SRR to achieve active modulation. With the increased conductivity of silicon, the MIT peak gradually decreases and finally disappears, exhibiting the switching phenomenon of MIT. Our proposed MIT structure can be applied in broadband terahertz communication systems and other emerging terahertz technologies.

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Tunable Terahertz Metamaterials with Double Split Rings for MIT Effect

  • Zhiyuan Zhang,
  • Miao Li,
  • Zhengrui Zhang,
  • Longyu Shi,
  • Pujing Zhang,
  • Xuteng Zhang,
  • Huiwen Shi,
  • Qingli Zhou,
  • Cunlin Zhang

摘要

Active modulation of metamaterial induced transparency (MIT) offers fascinating prospects for improving optical networks, terahertz communications, and active sensors. Here, tunable terahertz metamaterials consisting of external three-gap split-ring resonator (TGSRR) and internal single split ring resonator (SRR) are proposed to realize the switch behavior of MIT. It is observed that the transmission spectrum of that structure corresponds to a low-frequency LC resonance at 0.497 THz and a high-frequency LC resonance at 0.765 THz, and the MIT band has a central frequency at 0.56 THz. The reduction of the gap width in the SRR can result in an increase of the transparency peak and frequency redshift. Furthermore, silicon patches are embedded in the gaps of SRR to achieve active modulation. With the increased conductivity of silicon, the MIT peak gradually decreases and finally disappears, exhibiting the switching phenomenon of MIT. Our proposed MIT structure can be applied in broadband terahertz communication systems and other emerging terahertz technologies.