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With the rapid development of new energy, electric vehicles have gradually begun to replace fuel vehicles, and automotive SiC MOSFET is widely used in electric vehicles. When the electric vehicle is driving, the output power of the electric drive inverter will fluctuate greatly, so the SiC MOSFET device will withstand the intense alternating thermal stress shock, which challenges the reliability of the device. The reliability of SiC MOSFET devices in electric vehicles has become a research focus, and the reliability evaluation of the devices usually involves the accurate measurement and analysis of junction temperature. Based on the parameters of electric vehicle drive motor, this paper analyzes the mathematical relationship between the electric parameters of the drive inverter and the dynamic and static parameters of the vehicle, calculates the loss of SiC MOSFET, establishes a thermal network model, and estimates the junction temperature of SiC MOSFET. Finally, a working condition simulation platform of the electric drive inverter is built to verify that the junction temperature of the SiC MOSFET device estimated corresponds to the actual junction temperature of the device.

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Research on Junction Temperature Characteristics of SiC Device in Electric Drive Inverter Under CLTC-P Condition

  • 会议论文

  • 发表日期：

    2025年

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  • Junke Wu,
  • Zhou Wang,
  • Yunpeng Wei,
  • Yuntao Wu,
  • Xiangnan Wei,
  • Haidong Yan

摘要

With the rapid development of new energy, electric vehicles have gradually begun to replace fuel vehicles, and automotive SiC MOSFET is widely used in electric vehicles. When the electric vehicle is driving, the output power of the electric drive inverter will fluctuate greatly, so the SiC MOSFET device will withstand the intense alternating thermal stress shock, which challenges the reliability of the device. The reliability of SiC MOSFET devices in electric vehicles has become a research focus, and the reliability evaluation of the devices usually involves the accurate measurement and analysis of junction temperature. Based on the parameters of electric vehicle drive motor, this paper analyzes the mathematical relationship between the electric parameters of the drive inverter and the dynamic and static parameters of the vehicle, calculates the loss of SiC MOSFET, establishes a thermal network model, and estimates the junction temperature of SiC MOSFET. Finally, a working condition simulation platform of the electric drive inverter is built to verify that the junction temperature of the SiC MOSFET device estimated corresponds to the actual junction temperature of the device.