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The temperature dependent threshold voltage (VTH) shift in both planar and trench SiC MOSFETs were investigated. It was observed that VTH was negatively shifted with elevated temperatures. VTH shift in SiC MOSFETs with a planar gate (PG) is larger than that with a trench gate (TG). Then, the impact of VTH shift was evaluated by the double-pulse test (DPT) under different temperatures. A negative threshold voltage shift causes the channel turn on earlier, increasing the current overshoot (IOS) during the turn-on process, and PG is more pronounced than TG at high temperatures. The final derivation concludes that their temperature dependent threshold voltage shift differences are caused by differences in the interfacial trap density (Nit) in channels. These findings contribute to a deeper understanding of the causes and characteristics for VTH shift.

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Temperature Dependent Threshold Voltage Shift in Planar and Trench SiC MOSFETs

  • 会议论文

  • 发表日期：

    2025年

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  • Yichen Xu,
  • Junsong Jiang,
  • Xi Tang,
  • Kun Tan,
  • Cungang Hu,
  • Wenping Cao

摘要

The temperature dependent threshold voltage (VTH) shift in both planar and trench SiC MOSFETs were investigated. It was observed that VTH was negatively shifted with elevated temperatures. VTH shift in SiC MOSFETs with a planar gate (PG) is larger than that with a trench gate (TG). Then, the impact of VTH shift was evaluated by the double-pulse test (DPT) under different temperatures. A negative threshold voltage shift causes the channel turn on earlier, increasing the current overshoot (IOS) during the turn-on process, and PG is more pronounced than TG at high temperatures. The final derivation concludes that their temperature dependent threshold voltage shift differences are caused by differences in the interfacial trap density (Nit) in channels. These findings contribute to a deeper understanding of the causes and characteristics for VTH shift.