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This letter describes efficient high-power rectifiers, using a cost-effective AlGaN/GaN Schottky barrier diode (SBD) with accurate extraction of large-signal parameters as the rectifying device. The thin-barrier recess-free GaN SBD exhibits a low turn-on voltage of 0.5 V, a low ON-resistance of 6.2 Ω, a low junction capacitance of 0.28 pF, and a high breakdown voltage of 66 V. A precise equivalent-circuit model is derived by elaborating the measured I-V, C-V data, and S-parameters under different DC bias conditions. For model verification, two separate rectifiers working at 5.8 GHz and 10 GHz are fabricated. The measured results indicate that, with 31 dBm input power, the maximum efficiencies of the two rectifiers are 78.9% and 76.6% at 5.8 GHz and 10 GHz, respectively. The high-power rectifiers exhibit the merits of compact size and high efficiency, indicating great potential for large-scale microwave power transfer applications, such as Space Solar Power Systems.

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High Efficiency and Power Rectifier Based on Low Cost GaN Schottky Diode with Thin Barrier

  • 会议论文

  • 发表日期：

    2025年

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  • Shun Li,
  • Zhen Yue,
  • Xin Xu,
  • Xuanwu Kang,
  • Yingkui Zheng,
  • Hao Wu,
  • Xinyu Liu,
  • Cheng Peng

摘要

This letter describes efficient high-power rectifiers, using a cost-effective AlGaN/GaN Schottky barrier diode (SBD) with accurate extraction of large-signal parameters as the rectifying device. The thin-barrier recess-free GaN SBD exhibits a low turn-on voltage of 0.5 V, a low ON-resistance of 6.2 Ω, a low junction capacitance of 0.28 pF, and a high breakdown voltage of 66 V. A precise equivalent-circuit model is derived by elaborating the measured I-V, C-V data, and S-parameters under different DC bias conditions. For model verification, two separate rectifiers working at 5.8 GHz and 10 GHz are fabricated. The measured results indicate that, with 31 dBm input power, the maximum efficiencies of the two rectifiers are 78.9% and 76.6% at 5.8 GHz and 10 GHz, respectively. The high-power rectifiers exhibit the merits of compact size and high efficiency, indicating great potential for large-scale microwave power transfer applications, such as Space Solar Power Systems.