This paper investigates the temperature-sensitive electrical parameters (TSEPs) of IGBT devices under current-source and voltage-source gate driving conditions. Current-source driving provides notable advantages, including precise gate current regulation, reduced parasitic effects, and enhanced robustness to temperature variations. However, the temperature characteristics of IGBTs under current-source driving remain underexplored. To address this, the study conducts a comprehensive comparison of TSEPs between the two driving modes across various operating conditions. The objective is to evaluate the benefits and limitations of current source driving while expanding its functionality for applications such as online temperature monitoring. The findings not only deepen the understanding of current-source driving but also demonstrate its potential for improving the reliability and diagnostic capabilities of power electronics systems in temperature-critical environments.