In this paper, turn-on and turn-off simulation experiments are carried out on a 6.8 kV super-connected device based on silicon carbide (SiC) MOSFETs using LTspice simulation software to analyze its voltage equalization performance under dynamic and static conditions. The results show that the conventional super-connect topology suffers from drain-source overvoltage phenomenon and gate oscillation problem during the turn-on process, which affects the stability and reliability of the device. In this paper, an improved superlink structure is proposed, which significantly improves the gate oscillation problem during turn-on and turn-off and optimizes the dynamic voltage equalization effect of the drain-source voltage by connecting capacitors in parallel on each MOSFET, removing the pull-down resistor, and connecting a fast recovery diode in anti-parallel on the drive resistor. Simulation results show that the optimized super-connected structure exhibits better voltage distribution equalization in both turn-on and turn-off processes, and the maximum drain-source voltage difference is significantly reduced, which improves the stability and reliability of the system. The improved scheme in this paper provides an effective solution for the design of high-voltage and high-frequency power semiconductor devices, which has important theoretical significance and practical application value.