MEMS sensors and devices have numerous applications spanning across consumer gadgets, automotive electronics, industrial medical, defence, aerospace, etc. Despite the wide and increasing demands for MEMS-based devices such as sensors and actuators in diverse applications, unlike semiconductor technologies like CMOS/VLSI, the design and fabrication of MEMS/Microsystems are not fully standardized. Over the years, the demand for microscale sensors with read out electronic circuits has grown. Most of the commercially available MEMS sensors are based on passive transduction mechanisms such as capacitive, piezoresistive or piezoelectric with inherent performance limitations. These conventional sensors require external amplification, limiting their scalability, design flexibility, fabrication, and on-chip Integrated Circuit (IC) compatibility. These challenges can be overcome by adopting integrated CMOS-MEMS sensor architectures paving the way for efficient, scalable solutions. FET-based active transduction schemes have the potential to overcome these limitations with ease in CMOS-MEMS integration as an additional merit. One of the FET-based architectures, “Suspended gate field effect transistor (SGFET)” is a suitable option for integrating sensors with built-in amplification. Its innovative design eliminates the need for specific interface conversion circuits, offering a streamlined and efficient solution compared to traditional capacitive transduction methods. Certainly, overcoming specific challenges associated with the SGFET-based active transduction technique is crucial to developing SGFET-based CMOS-MEMS sensors for practical applications. This chapter will address challenges and different aspects and overview of our attempts towards indigenous development of MEMS sensors with FET-based electromechanical transduction with scope for CMOS-MEMS integration. Design, simulation, and fabrication process integration of CMOS-MEMS Accelerometers SGFET-based electromechanical transduction with different device architectures for overcoming the inherent challenges of SGFET are discussed in this chapter.