Full Custom Design of an Advanced Low Power PSRAM
摘要
This work presents a fully custom design of a 1 KB CMOS Pseudo-Static Random Access Memory (PSRAM). The PSRAM architecture incorporates a refresh control unit to maintain data integrity in the memory cells while minimizing power consumption. Unlike traditional DRAMs, the PSRAM employs a non-multiplexed address scheme, enabling a simpler interface and faster access times. The PSRAM design and simulation were conducted using ModelSim and Synopsis tools. The post-layout simulation results validated the pre-layout design, ensuring accurate circuit behavior. By combining the high-speed characteristics of SRAM with the low-power advantages of DRAM, the PSRAM offers a compelling solution for various embedded systems.