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This paper investigates the impact of field plate technology on GaN HEMT with 0.15 µm gate length. The study examines the effect on RF parameters by varying the field plate lengths (0.15–0.90 µm) and evaluates two distinct structures: source and gate field plates. The study evaluates their impact on essential RF parameters, with a particular emphasis on the cut-off frequency—a critical factor in high-frequency applications. The findings reveal that the source field plate structure, in particular, demonstrates remarkable performance, showcasing minimal shifts in cut-off and maximum frequency, a substantial increase in breakdown voltage, and an improved figure of merit (JFOM). Utilizing small-signal equivalent circuit extraction method, this investigation offers a comprehensive analysis of intrinsic parameters, providing valuable insights for optimizing GaN HEMTs with AlGaN barrier to perform superior in high-frequency applications.

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Investigating RF Parameters with Diverse Field Plate Structure for AlGaN/GaN HEMT with 0.15 µm Gate Length

  • 会议论文

  • 发表日期：

    2025年

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  • Sagar,
  • Anupama Anand,
  • Rakhi Narang,
  • Manoj Saxena,
  • Mridula Gupta

摘要

This paper investigates the impact of field plate technology on GaN HEMT with 0.15 µm gate length. The study examines the effect on RF parameters by varying the field plate lengths (0.15–0.90 µm) and evaluates two distinct structures: source and gate field plates. The study evaluates their impact on essential RF parameters, with a particular emphasis on the cut-off frequency—a critical factor in high-frequency applications. The findings reveal that the source field plate structure, in particular, demonstrates remarkable performance, showcasing minimal shifts in cut-off and maximum frequency, a substantial increase in breakdown voltage, and an improved figure of merit (JFOM). Utilizing small-signal equivalent circuit extraction method, this investigation offers a comprehensive analysis of intrinsic parameters, providing valuable insights for optimizing GaN HEMTs with AlGaN barrier to perform superior in high-frequency applications.