Designing the digital gates with less numbers of transistors reduces wiring complexity and circuit area. This paper explores the design analysis of various digital gates using Differential Cascode Voltage Switch Logic (DCVSL) circuit presenting complementary outputs. The designed logic circuits uses non-aligned double gate field effect transistor (NADGFET) of 110 nm length with low-k (SiO2, k = 3.9) as gate dielectric material in the designed DCVSL XOR/XNOR, and AND/NAND circuit. The Sentaurus TCAD tool is used to design and test the working of DCVSL circuits under different specifications commonly used for the digital circuit. The simulation result shows with a 1 V supply voltage, the DCVSL XOR circuit gives 35.5 ps in propagation delay, and 7.3 fJ-ps in energy-delay product. Whereas under same test condition, the DCVSL XNOR circuit gives 34.55 ps in propagation delay and 6.9 fJ-ps in energy-delay product; the AND gate using DCVSL logic gives 34.55 ps in propagation delay and 4.165 fJ-ps in energy-delay product, also the DCVSL NAND gives 34.25 ps in propagation delay, and 4.731 fJ-ps in energy-delay product. The result concludes about the NADGFET device’s suitability in low-power and high-frequency applications.