An extensive analysis of Single-Event Upsets (SEUs) induced by the heavy ion on lattice-matched In0.17Al0.83N/GaN architecture through TCAD simulations has been studied. To examine the performance using virtual radiation environment, a range of energies with different strike positions has been utilized using Linear Energy Transfer (LET) parameter. Further, the effect of different barrier thicknesses on the drain current and its vulnerability toward the SEU is studied. A comparative study of In0.17Al0.83N/GaN and Al0.23Ga0.77N/GaN architectures against the SEU is also used to establish and demonstrate the comparisons among the devices which further prove the suitability of InAlN/GaN HEMTs under the harsh environment in various space applications.