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This work investigates the total ionizing dose effects from 60Co source on COTS Enhancement-mode (E-Mode) p-GaN HEMT. The E-mode p-GaN devices were irradiated for a cumulative dose of ~ 5.3 kGy in a cylindrical chamber for uniform exposure. The DC characterization of the commercial devices post γ-ray exposure demonstrates a significant reduction in the ON-state current coupled with a positive shift in the device threshold voltage (VTH) and the degradation of the ON-state resistance (RON). Subsequent analysis points toward the creation of deep level traps associated with the nitrogen vacancies that significantly reduce the carrier concentration.

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γ-Ray Induced Effects on COTS E-Mode p-GaN AlGaN/GaN HEMTs

  • 会议论文

  • 发表日期：

    2025年

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  • Khushwant Sehra,
  • Chanchal,
  • Vandana Kumari,
  • Mridula Gupta,
  • Meena Mishra,
  • D. S. Rawal,
  • Manoj Saxena

摘要

This work investigates the total ionizing dose effects from 60Co source on COTS Enhancement-mode (E-Mode) p-GaN HEMT. The E-mode p-GaN devices were irradiated for a cumulative dose of ~ 5.3 kGy in a cylindrical chamber for uniform exposure. The DC characterization of the commercial devices post γ-ray exposure demonstrates a significant reduction in the ON-state current coupled with a positive shift in the device threshold voltage (VTH) and the degradation of the ON-state resistance (RON). Subsequent analysis points toward the creation of deep level traps associated with the nitrogen vacancies that significantly reduce the carrier concentration.