Scholarlink

This study presents the Double-Source Vertical Tunnel Field-Effect Transistor (DS-VTFET), a ground-breaking advancement in low-power performance. By leveraging line tunneling, the DS-VTFET achieves an extraordinary subthreshold swing of 4.1 mV/dec, establishing a new benchmark for near-ideal switching behavior. With a double-source structure that provides a wider space for tunneling, the DS-VTFET showcases an enhanced on-current of 6.52 × 10−5 A/µm, surpassing 7.74 × 1011 in ION/IOFF current ratio, and maintaining a low threshold voltage of 0.52 V, positioning it as a compelling solution for energy-efficient electronics. A comprehensive analysis encompassing DC analysis, AC analysis, and comparative analysis has been conducted using the latest tunnel FET devices.

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Detailed Investigation of Double-Source Vertical Tunnel Field-Effect Transistor (DS-VTFET) Behavior Under DC and AC Operating Conditions

  • 会议论文

  • 发表日期：

    2025年

查看全文
  • Potharaju Ramesh,
  • Busani Venkateswara Rao,
  • Bijit Choudhuri

摘要

This study presents the Double-Source Vertical Tunnel Field-Effect Transistor (DS-VTFET), a ground-breaking advancement in low-power performance. By leveraging line tunneling, the DS-VTFET achieves an extraordinary subthreshold swing of 4.1 mV/dec, establishing a new benchmark for near-ideal switching behavior. With a double-source structure that provides a wider space for tunneling, the DS-VTFET showcases an enhanced on-current of 6.52 × 10−5 A/µm, surpassing 7.74 × 1011 in ION/IOFF current ratio, and maintaining a low threshold voltage of 0.52 V, positioning it as a compelling solution for energy-efficient electronics. A comprehensive analysis encompassing DC analysis, AC analysis, and comparative analysis has been conducted using the latest tunnel FET devices.