This study primarily aimed to examine the switching behavior and RF performance of the Double Gate Tunnel Field Effect Transistor (DGTFET). Using a TCAD simulator, we present a dual-material double-gate TFET architecture with HfO2 as the dielectric, with the goal of overcoming the main problems encountered by the conventional MOSFET. The transfer characteristic plot is generated for the proposed structure, and multiple figures of merit (FOMs) are retrieved from the plot. The relevant DC properties being considered in this context are parasitic capacitances, transconductance, and cut-off frequency. The surface potential of the device for high-k dielectrics is also drawn. The study is carried out on dielectrics with a high permittivity, including Aluminium oxide (Al2O3), Hafnium Dioxide (HfO2). This study aims to compare and analyze the RF performance across different gate dielectrics.