Scholarlink

As discussed in Sect. 4.2.4 , SiC MOSFETs exhibit significantly faster switching speeds than Si IGBTs, enabling power converters to have lower losses and higher power density. However, this advantage comes with a downside: the higher switching speed results in a faster rate of turn-off current, leading to more severe issues with turn-off voltage overshoot for SiC MOSFETs compared to Si IGBTs. As mentioned in Sect. 3.1.1 , SiC MOSFET products from various manufacturers have avalanche voltages significantly higher than the rated breakdown voltage. This is done to address the issue of turn-off voltage overshoot. Although devices already have a certain safety margin, it is essential to avoid situations where the turn-off voltage peak exceeds the device’s rated breakdown voltage when designing power converter products. Some companies may even impose stricter derating specifications.

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Impact and Countermeasures of High di/dt—Turn-Off Voltage Overshoot

  • 章节

  • 发表日期：

    2025年

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  • Yuan Gao,
  • Yan Zhang

摘要

As discussed in Sect. 4.2.4 , SiC MOSFETs exhibit significantly faster switching speeds than Si IGBTs, enabling power converters to have lower losses and higher power density. However, this advantage comes with a downside: the higher switching speed results in a faster rate of turn-off current, leading to more severe issues with turn-off voltage overshoot for SiC MOSFETs compared to Si IGBTs. As mentioned in Sect. 3.1.1 , SiC MOSFET products from various manufacturers have avalanche voltages significantly higher than the rated breakdown voltage. This is done to address the issue of turn-off voltage overshoot. Although devices already have a certain safety margin, it is essential to avoid situations where the turn-off voltage peak exceeds the device’s rated breakdown voltage when designing power converter products. Some companies may even impose stricter derating specifications.