Switching characteristic test and reverse recovery characteristic test are both based on double-pulse test, a method that has been used for over 20 years, although not exclusive to SiC devices. However, due to the faster switching speed of SiC devices, higher demands are placed on the skills of test personnel and the performance of test equipment. This necessitates enhancements to the test techniques and equipment originally designed for Si devices. Consequently, these two tests stand out as one of the major differences between SiC and Si devices in terms of test, garnering more attention. Therefore, this chapter will first discuss switching characteristic test and reverse recovery characteristic test separately, highlighting their importance, before introducing other test items in the next chapter.