At 1700 V and below, SiC power devices are available in various voltage ratings. SiC power devices with different voltage ratings are designed for specific application scenarios, replacing different types of Si power devices. The 650–1000 V SiC MOSFETs primarily target Si SJ-MOSFETs and Si IGBTs. The 1200 and 1700 V SiC MOSFETs are mainly designed to replace Si IGBTs. SiC Schottky barrier diode (SiC SBD) is intended to replace Si FRDs. As a newer technology, SiC power devices aim to leverage their inherent advantages to help power converters achieve superior characteristics, such as simpler topology, higher efficiency, and increased power density. In certain application domains, SiC power devices have become the preferred choice, gradually replacing Si power devices with corresponding specifications.