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SiC MOSFETs have dozens of parameters to characterize their characteristics. These parameters are not only references for device selection but also help engineers to fine-tune transformer designs, such as evaluating and comparing devices based on figures of merit (FOM), modeling and simulating devices, and calculating device losses.

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SiC MOSFET Main Characteristics

  • 章节

  • 发表日期：

    2025年

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  • Yuan Gao,
  • Yan Zhang

摘要

SiC MOSFETs have dozens of parameters to characterize their characteristics. These parameters are not only references for device selection but also help engineers to fine-tune transformer designs, such as evaluating and comparing devices based on figures of merit (FOM), modeling and simulating devices, and calculating device losses.