MEMS capacitive pressure sensors are preferred over temperature sensitive Piezo resistive sensors for pressure sensing due to their higher sensitivity and long term stability, especially in sub-atmospheric pressure ranges. Conventional capacitive MEMS pressure sensors mostly use metal (gold) layer on glass wafer as one electrode and silicon diaphragm as another electrode by implementing the silicon-glass anodic bonding process. Gold metal lines for connecting the glass electrode to wire bond pads pass through the silicon-glass anodic bond interface causing hindrance to hermetic sealing of the device. This is a reliability concern affecting the long term stability of the device in the low pressure ranges applicable to biomedical applications. As applying epoxies externally around the bond area is not batch manufacturable, new MEMS processes eliminating the three material interface at the anodic bond area will be a promising technique for improving hermetic sealing. This paper reports design of a capacitive pressure sensor with a new process approach using fusion bonding for realizing a leak-proof and reliable sealing. SOI wafer and high resistivity wafer are fusion bonded (oxide-oxide bonding) and further processes are tailored such that the device layer of SOI wafer acts as one electrode and the doped layer on high resistivity wafer having a dent of 5 micron acts as another electrode. The doping process is extended to draw a conductive path from the electrode on high resistivity wafer to the sensor pads by passing the path underneath the oxide-oxide interface. In this manner, the tri-material interface at the bonding region can be avoided and hence reliable sealing is possible. Issues pertaining to mismatch in TCE of materials and mobile ion contamination due to the anodic bonding process in case of monolithic integration can be overcome. A tentative fabrication process flow highlighting intricacies involved and simulation results of low pressure range (0–1 bar) capacitive pressure sensors are discussed in this paper. The sensitivity of the pressure sensor at the design level is around 0.5 fF/mbar with a base capacitance of about 10 pF. Non-linearity value is influenced by sensitivity and non-linearity trade-off and is found to be around 1%. The natural frequency of the diaphragm is around 180 kHz which is suitable for low pressure sensing applications. Factor of safety of the structure is estimated to be around 63.6 by considering the maximum stress induced at burst pressure (2 bar).