One way to establish interconnection between electronic chips in the semiconductor packaging technology. The process uses metal wires, typically gold (Au), copper (Cu) and silver (Ag) to establish these interconnections. Semiconductor industries often use Au as the medium of interconnection in high end product as its excellent electrical conductivity ensures efficient signal transmission. Additionally, gold’s high resistance to corrosion compared to copper and silver, prevents connection degradation over time, a vital feature for reliable electronics. Moreover Aus wire materials are further segregated into the gold purity, which measured by the number of nines, N, in the industry. This paper studies the bonding quality of different Au purity in wire bonding, 2N, 3N and 4N. The experimental work focuses on the wire bonding process of 30 Au (gold) wires bonding on 30 Al (aluminum) bonding pad with variation of the Au purity. Analysis of the wire bonding quality is focused on the destructive and non destructive critical to quality (CTQ) items which includes ball size, ball thickness, ball shear and intermetallic coverage (IMC). The findings 2N Au wire deformation is lower compared to 4N which showing lower ball size, 43.0μm for 2N and 44.3μm for 4N. However, in ball thickness, 2N wire has higher thickness value compared to 4N with 19.4 μm and 17.2 μm respectively. Results also showed that the ball shear result for 2N wire are higher in gram force with 19.4g compared to the 3N and 4N purity wire of 17.4g and 17.2g respectively. IMC coverage on 4N purity show more coverage compared to the 2N purity with critical bonding parameters programmed are remained as constants. The study also analyse that all Au purity sample are able to meet the industrial spec JEDEC JESD47J of shear per area value above 0.0062 g force/ \({\mu m}^{2}\) .