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In this study, performance analysis of NC-NW-V-TFET has been presented. To maximize its vertical tunneling above the traditional vertical nanowire tunnel FET (NW-V-TFET), we study the HfO2 as a negative capacitance vertical tunnel FET (NCVT-FET). Because of the increased vertical electric field, negative capacitance causes a greater enhancement of vertical tunneling than normal tunneling. By 3D Silvaco TCAD tool enhancing of the device, smaller IOFF = 4.17 × 10–17 A/µm and largest ION = 2.27 × 10–6 A/µm at VDD = 1.0 V with 36.06 mV/decade sub-Vt swing over 2.6 decades of current were obtained. Even at VDD = 0.5 V, optimized (NC-NW-V-TFET) has 3.61 × 10–11 A/µm IOFF, 1.92 × 10–8 A/µm ION (167 × higher than the nominal NW-V-TFET), and a ratio of 103 for the ION/IOFF, so making it appropriate for low power applications.

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Design and Optimization Analysis of NC-NW-V-Tunnel FET for Low Power Applications

  • 会议论文

  • 发表日期：

    2025年

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  • Vijay Kumar Ram,
  • Tarun Chaudhary,
  • Mandeep Singh

摘要

In this study, performance analysis of NC-NW-V-TFET has been presented. To maximize its vertical tunneling above the traditional vertical nanowire tunnel FET (NW-V-TFET), we study the HfO2 as a negative capacitance vertical tunnel FET (NCVT-FET). Because of the increased vertical electric field, negative capacitance causes a greater enhancement of vertical tunneling than normal tunneling. By 3D Silvaco TCAD tool enhancing of the device, smaller IOFF = 4.17 × 10–17 A/µm and largest ION = 2.27 × 10–6 A/µm at VDD = 1.0 V with 36.06 mV/decade sub-Vt swing over 2.6 decades of current were obtained. Even at VDD = 0.5 V, optimized (NC-NW-V-TFET) has 3.61 × 10–11 A/µm IOFF, 1.92 × 10–8 A/µm ION (167 × higher than the nominal NW-V-TFET), and a ratio of 103 for the ION/IOFF, so making it appropriate for low power applications.