This paper proposes a simplified behavioral model for IGBTs (Insulated Gate Bipolar Transistor) based on the PSO (Particle Swarm Optimization) algorithm. First, a static model of IGBTs was established based on its output characteristic curve and transfer characteristic curve. Subsequently, a dynamic model of IGBTs was developed using an equivalent capacitance approach. To address the issue of high computational complexity in the nonlinear fitting of inter-electrode capacitance during the IGBT dynamic modeling process of IGBTs, double-pulse test data and the PSO algorithm is used to extract the inter-electrode capacitance parameters under fixed operating conditions. In the same way, the inter-electrode capacitance of IGBTs under various operating conditions can be further obtained, leading to the development of a simplified behavioral model for IGBTs. Finally, the effectiveness of the proposed method is validated through both simulation and experimental tests.