Scholarlink

This paper compares the performance of Gallium Nitride (GaN) and Silicon Carbide (SiC) in a Solid-State DC Circuit Breaker (SSCB). The switching speed, oscillation amplitude and stability of both semiconductors are analysed by simulating them in the same circuit topology. The results show that SiC has superior dielectric breakdown field strength and thermal conductivity in high-power applications, but voltage oscillations may occur during switching. In contrast, GaN has faster switching speeds and smaller oscillations, making it more suitable for high-frequency and high-efficiency applications. Therefore, choosing the right material can significantly improve the performance and reliability of power systems.

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Feasibility Study of Replacing Silicon Carbide (SiC) Devices with Gallium Nitride (GaN) Devices in Solid-State DC Circuit Breaker (SSCB) Applications

  • 会议论文

  • 发表日期：

    2025年

查看全文
  • Miaoran Zhang,
  • Yang Xu,
  • Wenxin Zhang,
  • Ruixin Xu,
  • Zhe Tian,
  • Peichao Xu

摘要

This paper compares the performance of Gallium Nitride (GaN) and Silicon Carbide (SiC) in a Solid-State DC Circuit Breaker (SSCB). The switching speed, oscillation amplitude and stability of both semiconductors are analysed by simulating them in the same circuit topology. The results show that SiC has superior dielectric breakdown field strength and thermal conductivity in high-power applications, but voltage oscillations may occur during switching. In contrast, GaN has faster switching speeds and smaller oscillations, making it more suitable for high-frequency and high-efficiency applications. Therefore, choosing the right material can significantly improve the performance and reliability of power systems.