Compared with traditional Si power devices, wide bandgap power devices silicon carbide (SiC) and gallium nitride (GaN) have outstanding characteristics, such as high switching speed, smaller junction capacitance, and low on resistance. SiC MOSFETs inverters suffer from iron losses due to nonlinear factors of output voltage, such as voltage drop, switch delay time, and dead time. This paper adopts an inverter based on SiC MOSFETs and analyzes the mechanism of the influence of voltage drop and dead time on iron loss. Through theoretical analysis and experimental results, it has been verified that the iron loss on inverter generated by SiC is smaller than Si.