Scholarlink

A rectangular, high current pulsed power supply based on pulse forming networks (PFNs) and insulated gate bipolar transistors (IGBTs) has been developed for the new generation of high intensity heavy ion accelerator. It employs eight IGBTs as discharge switches in a connection of four in series and two in parallel to achieve high voltage and high current. The synchronous triggering of IGBTs is achieved by adjusting the delay time of optical signals. The test results show that it can generate a rectangular pulse current of ~5 kA with a flat-top duration of ~2.3 µs and a flat-top ripple of less than ±1%, which satisfies the design requirements.

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

High Current Pulse Forming Network Switched by Insulated Gate Bipolar Transistors

  • 会议论文

  • 发表日期：

    2025年

查看全文
  • Jie Gao,
  • Jingbin Shangguan,
  • Yuzhen Huang,
  • Huajian Zhang,
  • Yuqiang Zhang,
  • Daqing Gao

摘要

A rectangular, high current pulsed power supply based on pulse forming networks (PFNs) and insulated gate bipolar transistors (IGBTs) has been developed for the new generation of high intensity heavy ion accelerator. It employs eight IGBTs as discharge switches in a connection of four in series and two in parallel to achieve high voltage and high current. The synchronous triggering of IGBTs is achieved by adjusting the delay time of optical signals. The test results show that it can generate a rectangular pulse current of ~5 kA with a flat-top duration of ~2.3 µs and a flat-top ripple of less than ±1%, which satisfies the design requirements.