Computer architecture is at the leading of memory technology with nonvolatile memory (NVM) and dynamic random-access memory (DRAM) offering distinct benefits and difficulties. The present study, entitled “An Insightful Memory Subsystem Design: DRAM versus Non-Volatile Memories,” presents a detailed analysis of the two types of memory, with special reference to relevant factors covering bandwidth, latency, energy consumption, scalability, and persistence. DRAM is a critical element of high-performance computing due to its high bandwidth and low latency scalability. They are characterized by high power consumption, low controllability, and identified potential scalability concerns, yet there is still room for worry. On the other hand, NVM technologies have lower power consumption and data persistence like Resistive RAM. These advanced technologies include Resistive RAM (ReRAM), Spin-Transfer Torque RAM (STT-RAM), and Phase Change RAM (PCRAM). According to the findings of the research, there is a blended memory architecture that unites the parameters of energy economy and durability of the characteristics of NVM with the performance of DRAM. This research provides an idea for achieving scalable, efficient, and reliable memory suitable for data center applications and HPC by filling the gap between the continued presence of NVM or Math in Paper Title or Abstract.