Research on the Remaining Useful Life Prediction Method of IGBT Based on an Exponential Degradation Model
摘要
As a core component of modern power electronic equipment, the remaining life of IGBT is crucial to the safe operation and maintenance of power electronic equipment. In this paper, we propose a remaining useful life prediction method for IGBT based on an exponential degradation model. Firstly, the turn-on voltage of IGBT is selected as the degradation state parameter, and an exponential degradation model is established to describe the degradation process of IGBT. Then, the model parameters are updated in real time based on Bayesian theory and Maximum Likelihood Estimation to predict the remaining useful life of IGBT. Finally, the validity of the model is verified by utilizing the power cycling experimental data.