Memristors are typically classified into two categories: charge-controlled and flux-controlled memristors [1]. Charge-controlled memristors are devices that achieve information storage based on changes in the resistivity of electrode-electrolyte contact. They are composed of liquid and solid electrolytes. When a voltage is applied, the concentration and resistance of the electrode-electrolyte change, thereby altering the impedance of the circuit and achieving information storage. Flux-controlled memristors, on the other hand, are devices that achieve information storage based on the magnetoresistance effect. They are composed of magnetic materials and metals. When a magnetic field is applied, the magnetoresistance of the magnetic material changes, thereby altering the impedance of the circuit and realizing information storage. Therefore, charge-controlled memristors and flux-controlled memristors differ in their storage principles and structures.