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Microtexture and Polymorphism Observed During the Molecular-Beam Epitaxial Growth of Group III–V Semiconductor Nanostructures

  • Fumitaro Ishikawa,
  • Kazuki Nagashima,
  • Takeshi Yanagida,
  • Robert D. Richards,
  • Irina A. Buyanova

摘要

This study explores experimental research on the molecular-beam epitaxialEpitaxial growth of compound semiconductor nanowiresNanowire (NWs). Unique crystals, such as crystal whiskersWhisker, can be grown based on the understanding of the growth mechanism of III–V semiconductor thin films.