Crystalline Microstructure and Versatile Resistive Switching Property in Rutile TiO2-x Four-Terminal Memristors

This chapter presents the basic principles of novel four-terminal memristiveMemristive devices and proof of concept results obtained in the memristorsMemristor fabricated on rutile TiO2–x single crystals. Systematic electronic and microstructural characterization show that the behavior of dopantDopant (oxygen vacancyOxygen vacancy) redistribution and resultant resistive switching properties strongly depend on crystal orientation reflecting crystalline anisotropy or crystal habits of titanium oxidesTitanium oxides. These experiments prove that the choice of crystal orientation is critical to achieve good reversibility of electronic properties in single crystalline memristorsMemristor. Feasibility of imparting versatile synaptic functionalities by controlling two dimensional distribution of dopantsDopant among multi-terminals configuration is discussed.